(China (Mainland))
Product Summary
The IRFM150 is a N- channel power MOSFET. It is the key to international rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. The IRFM150 also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
Parametrics
IRFM150 absolute maximum ratings: (1)continuous drain current @ TC = 25℃: 34A; (2)continuous drain current @ TC = 100℃: 21A; (3)Pulsed drain current: 136 A; (4)Max. power dissipation: 150W; (5)Linear derating factor: 1.2 W/ K; (6)Gate- to- source voltage: ± 20V; (7)Operating junction storage temperature range: -55℃ to 150℃; (8)lead temperature: 300℃.
Features
IRFM150 features: (1)repetitive avalanche rating; (2)isolated and hermetically sealed; (3)alternative to TO- 3 package; (4)simple drive requirements; (5)ease of paralleling; (6)ceramic eyelets.
Diagrams
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 IRFM150 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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